Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates-Reference-Cited by-同舟云学术

Room-temperature photoluminescence and electroluminescence of 1.3-μm-range BGaInAs quantum wells on GaAs substrates

Published:2020-07-13 Issue:2 Volume:117 Page:021102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

El-Jaroudi R. H.¹^ORCID,McNicholas K. M.¹^ORCID,Briggs A. F.¹^ORCID,Sifferman S. D.¹^ORCID,Nordin L.¹^ORCID,Bank S. R.¹^ORCID

Affiliation:

1. Microelectronics Research Center, Electrical and Computer Engineering, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78752, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0011147

Reference28 articles.

1. 1.3 μm room-temperature GaAs-based quantum-dot laser

2. 1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers

3. Differential Gain and Gain Compression in Quantum-Dot Lasers

4. Nitrogen incorporation in group III–nitride–arsenide materials grown by elemental source molecular beam epitaxy

5. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

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