6.1 W continuous wave front-facet power from Al-free active-region (λ=805 nm) diode lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120628
Reference14 articles.
1. High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping
2. Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m
3. High-power separate-confinement heterostructure AlGaAs/GaAs laser diodes with broadened waveguide
4. 5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers
5. Dark-line-resistant, aluminum-free diode laser at 0.8 mu m
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