5 W continuous wave power, 0.81-μm-emitting, Al-free active-region diode lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119528
Reference11 articles.
1. High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers
2. Optimized structure for InGaAsP/GaAs 808 nm high power lasers
3. High power 875 nm Al-free laser diodes
4. Strain effects on InGaP-InGaAsP-GaAsP tensile strained quantum-well lasers
5. Highly Reliable Operation of High-Power InGaAsP/InGaP/AlGaAs $\bf 0.8 {\mbi \mu } m$ Separate Confinement Heterostructure Lasers
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1. MOVPE growth of laser structures for high-power applications at different ambient temperatures;Journal of Crystal Growth;2016-10
2. High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement;Semiconductors;2009-04
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4. Pressure induced wavelength dependence of catastrophic optical damage in 980 nm semiconductor diode lasers;physica status solidi (b);2004-11
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