Van der Waals xenotaxy: Oriented growth of hexagonal GaSe(001) on rectangular GaAs(110)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125951
Reference22 articles.
1. GaAs on Si(111) with a layered structure GaSe buffer layer
2. Van der Waals type buffer layers: epitaxial growth of the large lattice mismatch system CdS/InSe/H–Si(111)
3. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system
4. Epitaxial layer growth of Ag(111)-films on Si(100)
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Synthesis and characterization of 2D transition metal dichalcogenides: Recent progress from a vacuum surface science perspective;Surface Science Reports;2021-05
2. Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy;Surface and Interface Analysis;2018-10-02
3. Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates;Crystal Growth & Design;2012-11-06
4. Engineering the line up of electronic energy levels at inorganic-organic semiconductor interfaces by variation of surface termination and by substitution;physica status solidi (b);2008-09
5. Growth and Optical Property of GaSe Thin Film on Silica Glass Fabricated by Electron Beam Deposition;Journal of The Surface Finishing Society of Japan;2006
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3