Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates-Reference-Cited by-同舟云学术

Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates

Published:2012-11-06 Issue:12 Volume:12 Page:6098-6103
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Borisova Svetlana¹,Krumrain Julian¹,Luysberg Martina²,Mussler Gregor¹,Grützmacher Detlev¹

Affiliation:

1. Peter Grünberg Institute −9, Forschungszentrum Jülich, D-52425, Jülich, Germany; JARA, Fundamentals of Future Information Technologies

2. Peter Grünberg Institute −5, Forschungszentrum Jülich, D-52425, Jülich, Germany; Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, D-52425, Jülich, Germany

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg301236s

Reference26 articles.

1. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

2. Topological insulators with inversion symmetry

3. Colloquium: Topological insulators

4. A New Spin on the Insulating State

5. The Quantum Spin Hall Effect: Theory and Experiment

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