Simulation of hyperthermal deposition of Si and C on SiC surfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123131
Reference11 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. Seeded pulsed supersonic molecular beam growth of silicon carbide thin films
3. Simulating diffusion on Si(001) 2×1 surfaces using a modified interatomic potential
4. Molecular-dynamics simulations of methyl-radical deposition on diamond (100) surfaces
5. Molecular-dynamics simulations of methyl-radical deposition on diamond (100) surfaces
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1. CFD coupled kinetic modeling and simulation of hot wall vertical tubular reactor for deposition of SiC crystal from MTS;Journal of Crystal Growth;2017-10
2. Hyperthermal chemistry in the gas phase and on surfaces: theoretical studies;International Reviews in Physical Chemistry;2004-07
3. Empirical molecular dynamic study of SiC(0001) surface reconstructions and bonded interfaces;Journal of Applied Physics;2000-12-15
4. Empirical Molecular Dynamics Modeling of Silicon and Silicon Dioxide: A Review;Critical Reviews in Solid State and Materials Sciences;1999-12
5. A Comparison Between the Calculated and Experimental Effects of Enhanced Precursor Translational Kinetic Energy on SiC Growth on Si(100) and Si(L11) from Hexamethyldisilane;MRS Proceedings;1999
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