The thermally enhanced diffusion of point defects near dislocations during device operation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.326479
Reference8 articles.
1. Macroscopic Symmetry and Properties of Crystals
2. The piezoresistance effect and dislocations in III‐V compounds
3. On the temperature distributions around dislocations in III‐V compounds due to Joule heating
4. Defect structure introduced during operation of heterojunction GaAs lasers
5. Rapid degradation phenomenon in heterojunction GaAlAs–GaAs lasers
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1. Nonlinear thermo-elastic analysis of edge dislocations with Internal Heat Generation in Semiconductor Materials;Mechanics of Materials;2022-06
2. Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures;ECS Journal of Solid State Science and Technology;2014
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