Modeling of nanoscale devices with carriers obeying a three-dimensional density of states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4800869
Reference22 articles.
1. Compact Modeling of Quasi-Ballistic Silicon Nanowire MOSFETs
2. Polymer space-charge-limited transistor as a solid-state vacuum tube triode
3. Graphene Barristor, a Triode Device with a Gate-Controlled Schottky Barrier
4. A quantum correction based on schrodinger equation applied to Monte Carlo device simulation
5. Ballistic metal‐oxide‐semiconductor field effect transistor
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1. The effect of random dopant fluctuation on threshold voltage and drain current variation in junctionless nanotransistors;Journal of Semiconductors;2015-09
2. Small-signal modeling of graphene barristors;Physica E: Low-dimensional Systems and Nanostructures;2015-08
3. Characterization and Physical Modeling of Turn-On Voltage, Saturation Voltage and Transition Slope in Graphene Barristors;IEEE Transactions on Nanotechnology;2015-07
4. Physical insights of body effect and charge degradation in floating-body DRAMs;Solid-State Electronics;2014-05
5. Variability of the Drain Current in Junctionless Nanotransistors Induced by Random Dopant Fluctuation;IEEE Transactions on Electron Devices;2014-03
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