Trade-off between morphology, extended defects, and compositional fluctuation induced carrier localization in high In-content InGaN films
Author:
Affiliation:
1. Walter Schottky Institut and Physik Department, Technische Universität München, Garching 85748, Germany
Funder
Deutsche Forschungsgemeinschaft (DFG)
Bayerische Forschungsstiftung (Bavarian Research Foundation)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4891990
Reference51 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. InGaN/GaN multiple quantum well concentrator solar cells
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4. Photoluminescence properties of self-assembled InN dots embedded in GaN grown by metal organic vapor phase epitaxy
5. Near-infrared InN quantum dots on high-In composition InGaN
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