Hydrogenation of GaSb/GaAs quantum rings-Reference-Cited by-同舟云学术

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Hydrogenation of GaSb/GaAs quantum rings

Published:2014-08-25 Issue:8 Volume:105 Page:081907
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hodgson P. D.¹,Hayne M.¹,Ahmad Kamarudin M.¹²,Zhuang Q. D.¹,Birindelli S.³,Capizzi M.³

Affiliation:

1. Department of Physics, Lancaster University, Lancaster LA1 4YB, United Kingdom

2. Department of Physics, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor, Darul Ehsan, Malaysia

3. Dipartimento di Fisica, Sapienza Universita` di Roma, Piazzale A. Moro 2, 00185 Roma, Italy

Funder

QinetiQ

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4894413

Reference42 articles.

1. Resistance to edge recombination in GaAs-based dots-in-a-well solar cells

2. Semiconductor quantum light sources

3. Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

4. Excitonic Mott transition in type-II quantum dots

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy;Nanotechnology;2020-05-14

2. GaSb quantum rings in GaAs/AlxGa1−xAs quantum wells;Journal of Applied Physics;2016-01-28

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