Transport characteristics of InSb trench-type in-plane gate quantum point contact-Reference-Cited by-同舟云学术

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Transport characteristics of InSb trench-type in-plane gate quantum point contact

Published:2018-05-07 Issue:19 Volume:112 Page:192103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Masuda T.¹,Sekine K.¹,Nagase K.¹,Wickramasinghe K. S.²,Mishima T. D.²,Santos M. B.²,Hirayama Y.¹³^ORCID

Affiliation:

1. Graduate School of Science, Tohoku University, Sendai 980-8578, Japan

2. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019-2061, USA

3. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5023836

Reference27 articles.

1. Mid-wavelength infrared InAsSb/InSb nBn detector with extended cut-off wavelength

2. Heterogeneous InSb quantum well transistors on silicon for ultra-high speed, low power logic applications

3. Spintronics: Fundamentals and applications

4. All-electric quantum point contact spin-polarizer

5. Spin–orbit induced electronic spin separation in semiconductor nanostructures

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