Spontaneous ridge-structure formation and large field emission of heavily Si-doped AlN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1357449
Reference15 articles.
1. Electron emission properties of crystalline diamond and III-nitride surfaces
2. Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)‐SiC(0001)
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4. Thin films of aluminum nitride and aluminum gallium nitride for cold cathode applications
5. Electron Emission from Graded AlxGa1-xN/GaN Negative-Electron-Affinity Cold Cathodes
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2. On the Possibility of Realizing a 2D Structure of Si─N Bonds by Metal‐Organic Chemical Vapor Deposition;physica status solidi (b);2023-08-16
3. Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC;Chinese Physics B;2016-05
4. n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon;Journal of Materials Chemistry C;2016
5. Thin film micro-scaled cold cathode structures of undoped and Si-doped AlN grown on SiC substrate with low turn-on voltage;Chinese Physics B;2015-04-30
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