Theoretical investigation of 1.3 μm dots-under-a-well and dots-in-a-well InAs/GaAs quantum dot vertical-cavity surface-emitting lasers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3191660
Reference42 articles.
1. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
2. Monolithic VCSEL with InGaAsN active region emitting at 1.28 [micro sign]m and CW output power exceeding 500 [micro sign]W at room temperature
3. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region
4. 1.3 [micro sign]m InGaAsN vertical cavity surface emitting lasers grown by MOCVD
5. MOVPE-grown GaInNAs VCSELs at 1.3 [micro sign]m with conventional mirror design approach
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