High-performance 1.55μm low-temperature-grown GaAs resonant-cavity-enhanced photodetector
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2357916
Reference15 articles.
1. SiGe/Si resonant-cavity-enhanced photodetectors for 1.3 μm operation fabricated using wafer bonding techniques
2. New MBE buffer used to eliminate backgating in GaAs MESFETs
3. Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures
4. Optical properties of low-temperature grown GaAs on Bragg reflectors
5. Subband gap carrier dynamics in low-temperature-grown GaAs
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4. Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations;SPIE Proceedings;2015-04-13
5. Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector;Advances in Condensed Matter Physics;2015
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