Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Sim/Gen)N superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1378057
Reference17 articles.
1. Relaxed SiGe buffers with thicknesses below 0.1 μm
2. Growth and properties of Si/SiGe superlattices
3. Totally relaxed GexSi1−xlayers with low threading dislocation densities grown on Si substrates
4. Anomalous strain relaxation in SiGe thin films and superlattices
5. Structural characterization of Si1−xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates
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1. Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures;Applied Surface Science;2009-10
2. Ultrathin amorphous Si layer for the growth of strain relaxed Si0.75Ge0.25 alloy layer;Journal of Applied Physics;2006-09
3. Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots;Thin Solid Films;2006-06
4. Structural Characterization of Si0.75Ge0.25Alloy Layers with Sb/Ge-Mediated Low Temperature-grown Si Buffers;Japanese Journal of Applied Physics;2005-05-10
5. Impact of growth conditions on vacancy-type defects in silicon–germanium structures grown by molecular-beam epitaxy;Applied Physics Letters;2005-03-28
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