Fabrication and integration possibilities of ultrasmall quantum dots in silicon-on-insulator material
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1379352
Reference12 articles.
1. Gate controlled Coulomb blockade effects in the conduction of a silicon quantum wire
2. Single-electron transistors fabricated from a doped-Si film in a silicon-on-insulator substrate
3. Single-electron tunneling in highly doped silicon nanowires in a dual-gate configuration
4. Coulomb blockade in quasimetallic silicon-on-insulator nanowires
5. Observation of quantum effects and Coulomb blockade in silicon quantum‐dot transistors at temperatures over 100 K
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