Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate-Reference-Cited by-同舟云学术

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Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate

Published:2017-05-01 Issue:5 Volume:5 Page:056105
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Mater.

Author:

Katase Takayoshi¹²^ORCID,Endo Kenji³,Ohta Hiromichi¹^ORCID

Affiliation:

1. Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo 001-0020, Japan

2. PRESTO, Japan Science and Technology Agency, 5 Sanbancho, Chiyoda, Tokyo 102-0075, Japan

3. Graduate School of Information Science and Technology, Hokkaido University, N14W19, Kita, Sapporo 060-0814, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Reference26 articles.

1. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature

2. Electronic Properties of VO2near the Semiconductor-Metal Transition

3. The two components of the crystallographic transition in VO2

4. Structural Aspects of the Metal-Insulator Transitions in Cr-Doped VO2

5. Mott Transition in VO 2 Revealed by Infrared Spectroscopy and Nano-Imaging

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