Mott Transition in VO 2 Revealed by Infrared Spectroscopy and Nano-Imaging

Author:

Qazilbash M. M.1234,Brehm M.1234,Chae Byung-Gyu1234,Ho P.-C.1234,Andreev G. O.1234,Kim Bong-Jun1234,Yun Sun Jin1234,Balatsky A. V.1234,Maple M. B.1234,Keilmann F.1234,Kim Hyun-Tak1234,Basov D. N.1234

Affiliation:

1. Physics Department, University of California–San Diego, La Jolla, CA 92093, USA.

2. Abt. Molekulare Strukturbiologie, Max-Planck-Institut für Biochemie and Center for NanoScience, 82152 Martinsried, München, Germany.

3. IT Convergence and Components Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-350, Korea.

4. Theoretical Division and Center for Integrated Nanotechnologies, MS B262, Los Alamos National Laboratory, Los Alamos, NM 87545, USA.

Abstract

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be radically different from that characterized by free electrons in conventional metals. We report on the electronic properties of a prototypical correlated insulator vanadium dioxide in which the metallic state can be induced by increasing temperature. Scanning near-field infrared microscopy allows us to directly image nanoscale metallic puddles that appear at the onset of the insulator-to-metal transition. In combination with far-field infrared spectroscopy, the data reveal the Mott transition with divergent quasi-particle mass in the metallic puddles. The experimental approach used sets the stage for investigations of charge dynamics on the nanoscale in other inhomogeneous correlated electron systems.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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