Fundamental miniaturization limits for MOSFETs with a monolayer MoS2 channel-Reference-Cited by-同舟云学术

Fundamental miniaturization limits for MOSFETs with a monolayer MoS2 channel

Published:2021-07-26 Issue:4 Volume:119 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Strikha Maksym V.¹²^ORCID,Yelisieiev Mykola³^ORCID,Morozovska Anna N.⁴^ORCID

Affiliation:

1. Taras Shevchenko Kyiv National University, Faculty of Radiophysics, Electronics and Computer Systems, pr. Akademika Hlushkova 4g, 03022 Kyiv, Ukraine

2. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauky 41, 03028 Kyiv, Ukraine

3. Taras Shevchenko National University of Kyiv, Faculty of Physics, pr. Akademika Hlushkova 4a, 03022 Kyiv, Ukraine

4. Institute of Physics, National Academy of Sciences of Ukraine, pr. Nauky 46, 03028 Kyiv, Ukraine

Funder

National Research Foundation of Ukraine

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0056720

Reference22 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

3. Narrow graphene nanoribbons from carbon nanotubes

4. Computational 2D Materials Database: Electronic Structure of Transition-Metal Dichalcogenides and Oxides

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High thermoelectric performance induced by strong anharmonic effects in monolayer (PbX)₂ (X = S, Se, Te);Applied Physics Letters;2022-07-25

2. Facile damage-free double exposure for high-performance 2D semiconductor based transistors;Materials Today Physics;2022-05

3. Special topic on materials and devices for 5G electronics;Applied Physics Letters;2022-02-07