Defect annihilation in AlN thin films by ultrahigh temperature processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126185
Reference14 articles.
1. Activation Energy for the Sublimation of Gallium Nitride
2. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
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4. Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma‐enhanced molecular beam epitaxy
5. Microstructure and optical properties of epitaxial GaN on ZnO (0001) grown by reactive molecular beam epitaxy
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