Electron‐hole recombination at the Si‐SiO2interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96570
Reference10 articles.
1. An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes
2. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
3. Measurement of semiconductor–insulator interface states by constant‐capacitance deep‐level transient spectroscopy
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