Response to “Comment on ‘Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature’ ” [Appl. Phys. Lett. 81, 2659 (2002)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1510944
Reference12 articles.
1. Comment on “Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature” [Appl. Phys. Lett. 80, 3482 (2002)]
2. Tunnel injection In0.4Ga0.6As/GaAs quantum dot lasers with 15 GHz modulation bandwidth at room temperature
3. Enhanced modulation bandwidth (20 GHz) of In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers at cryogenic temperatures: role of carrier relaxation and differential gain
4. Tunneling-injection quantum-dot laser: ultrahigh temperature stability
5. Efficient high-speed direct modulation in p-doped In0.35 Ga0.65As/GaAs multiquantum well lasers
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1. Gain narrowing and output behavior of InP-InGaAlP tunneling injection quantum-dot-well laser;IEEE Photonics Technology Letters;2005-05
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