Measurement of Si, SiF, and SiF2 radicals and SiF4 molecule using very high frequency capacitively coupled plasma employing SiF4
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1592011
Reference27 articles.
1. Effect of fluorine on dielectric properties of SiOF films
2. Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4
3. Role of Seed Crystal Layer in Two-Step-Growth Procedure for Low Temperature Growth of Polycrystalline Silicon Thin Film from SiF4by a Remote-Type Microwave Plasma Enhanced Chemical Vapor Deposition
4. Infrared diode laser spectroscopy of the SiF radical. Analysis of hot bands up to ν = 9−8
5. Infrared diode laser spectroscopy of the SiF radical
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