Excess silicon at the Si3N4/SiO2 interface
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.120786
Reference14 articles.
1. Microscopic structure of theSiO2/Si interface
2. Nature of theE’ deep hole trap in metal‐oxide‐semiconductor oxides
3. Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation
4. Surface Oxidation of Silicon Nitride Films
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