Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric-Reference-Cited by-同舟云学术

Effects of interfacial oxide layers of the electrode metals on the electrical characteristics of organic thin-film transistors with HfO2 gate dielectric

Published:2011-08-15 Issue:4 Volume:110 Page:044108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Tang W. M.,Greiner M. T.,Helander M. G.,Lu Z. H.,Ng W. T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3622582

Reference29 articles.

1. Humidity sensors based on pentacene thin-film transistors

2. Organic thin-film transistors: A review of recent advances

3. Organic thin film transistors with HfO2 high-k gate dielectric grown by anodic oxidation or deposited by sol–gel

4. Pentacene thin-film transistors and inverters with plasma-enhanced atomic-layer-deposited Al2O3 gate dielectric

5. Poly(3-hexylthiophene) field-effect transistors with high dielectric constant gate insulator

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