In-plane photovoltage and photoluminescence studies in sequentially grown GaInNAs and GaInAs quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1541104
Reference29 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Chemical beam epitaxy of GaInNAs/GaAs quantum wells and its optical absorption property
3. Effect of nitrogen on the band structure of GaInNAs alloys
4. Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
5. (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser with ultrabroad temperature operation range
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1. Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures;Nanoscale Research Letters;2012-11-28
2. Acceptor formation in Mg-doped, indium-rich Ga x In1−xN: evidence for p-type conductivity;Nanoscale Research Letters;2012-10-18
3. Mapping the effective mass of electrons in III-V semiconductor quantum confined structures;Physical Review B;2006-01-12
4. Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain-compensated barriers;SPIE Proceedings;2005-01-20
5. Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs∕GaAs single quantum well structures;Journal of Applied Physics;2004-12
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