Insituelectron spectroscopy study of Si surfaces after Ar‐ion‐assisted Cl2etching
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342562
Reference25 articles.
1. Ion‐ and electron‐assisted gas‐surface chemistry—An important effect in plasma etching
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4. Chlorine chemisorption on silicon and germanium surfaces: Photoemission polarization effects with synchrotron radiation
5. Chemisorption of chlorine on Si(111) 7 × 7 and 1 × 1 surfaces
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1. Various Phenomena on PSI. PSI in Plasma Processing Devices. Plasma Etching.;Journal of Plasma and Fusion Research;1999
2. Reaction kinetics of chlorine on Si(111)7 × 7 surfaces;Surface Science;1993-03
3. Chlorine/silicon surface reactions under heating;Surface Science;1991-07
4. Influence of O2 and oxide on Cl/Si surface reactions;Surface Science;1991-05
5. Native oxide removal during chlorine reactive ion etching of silicon in an rf diode reactor;Journal of Applied Physics;1990-09
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