Hole trapping in the bulk of SiO2layers at room temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.327357
Reference17 articles.
1. Role Transport and Charge Relaxation in Irradiated SiO2 MOS Capacitors
2. Hole Transport in MOS Oxides
3. Radiation-Induced Charge Transport and Charge Buildup in SiO2 Films at Low Temperatures
4. Impact ionization and positive charge in thin SiO2films
5. Location of positive charges in SiO2films on Si generated by vuv photons, x rays, and high‐field stressing
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