Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.121837
Reference10 articles.
1. Control of ordering in Ga0.5In0.5P using growth temperature
2. Ordering and disordering of doped Ga0.5In0.5P
3. Influence of domain size on optical properties of ordered GaInP2
4. Photoluminescence excitation spectroscopy yields band gap of Ga0.5In0.5P containing relatively ordered domains
5. Transport anisotropy in spontaneously ordered GaInP2 alloys
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