Survival of atomic monolayer steps during oxide desorption on GaAs (100)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Reference15 articles.
1. Surface ordering on GaAs(100) by indium-termination
2. Surface dynamics during phase transitions of GaAs(100)
3. Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient
4. Surface topography changes during the growth of GaAs by molecular beam epitaxy
5. Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
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