Critique of (time)1/3kinetics of defect formation in amorphous Si:H and a possible alternative model—Comment on ‘‘Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon’’ [Appl. Phys. Lett.45, 1075 (1984)]
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100974
Reference8 articles.
1. Kinetics of the Staebler–Wronski effect in hydrogenated amorphous silicon
2. Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
3. Physical processes in degradation of amorphous Si:H
4. Resolution of amorphous silicon thin‐film transistor instability mechanisms using ambipolar transistors
5. Kinetics, energetics, and origins of defects in amorphous Si:H
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