Electrical characterization of defects introduced during electron beam deposition of Pd Schottky contacts on n-type Ge
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2213203
Reference13 articles.
1. Semiconductors and Semimetals;Hull R.,1999
2. Irradiation-induced defects in Ge studied by transient spectroscopies
3. Electronic properties of antimony-vacancy complex in Ge crystals
4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi
5. Electronic properties of vacancy–oxygen complex in Ge crystals
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