Enhancement of free‐carrier concentration inn‐type AlxGa1−xAs grown by metalorganic vapor phase epitaxy in the temperature range 850–950 °C
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100775
Reference13 articles.
1. VPE growth of AlxGa1−xAs
2. Luminescence of AlxGa1−xAs grown by MOVPE
3. Increase in luminescence efficiency of AlxGa1−xAs grown by organometallic VPE
4. OMVPE growth of AlxGa1−xAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Epitaxial Growth and Characterisation of Silicon Delta-Doped GaAs, AlAs and Alx Ga1-xAs;Crystal Research and Technology;2001-10
2. Effects of the DX center multiplicity on the transport properties of AlxGa1−xAs:Si;Journal of Applied Physics;1997-12
3. Chapter 6 DX and Related Defects in Semiconductors;Imperfections in III/V Materials;1993
4. DXcenters in Sn‐doped AlxGa1−xAs grown by metalorganic vapor phase epitaxy atT≥850 °C;Applied Physics Letters;1992-01-20
5. Donor-related levels in GaAs and AlxGa1-xAs;Semiconductor Science and Technology;1991-10-01
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