Recombination in solar‐grade polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337899
Reference6 articles.
1. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
2. Transient capacitance spectroscopy in polycrystalline silicon
3. Defect analysis in polycrystalline silicon solar cells
4. On the Barrier Height of Al/p-Si Schottky Diodes
5. Charge collection scanning electron microscopy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Spectra of polycrystalline and single-crystal silicon for solar cells measured by deep-level transient spectroscopy;Technical Physics Letters;1997-02
2. Phosphorus Doping and Passivation Processes for Poly and Monocrystalline Silicon Using Ion Plasma Source;Ion Beam Modification of Materials;1996
3. Deep levels in edge‐defined, film‐fed grown silicon solar cells;Applied Physics Letters;1990-05-28
4. A new correlation method for improvement in selectivity of bulk trap measurements from capacitance and voltage transients;Review of Scientific Instruments;1990-04
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