Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine-Reference-Cited by-同舟云学术

Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

Published:2003-09 Issue:5 Volume:94 Page:2962-2967
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Liu C. Y.,Yuan Shu,Dong J. R.,Chua S. J.,Chan M. C. Y.,Wang S. Z.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1597977

Reference24 articles.

1. Extremely high quantum efficiency (86%) operation of AlGaInP visible laser diode with lateral leaky waveguide structure

2. Room temperature operation of ultrashort wavelength (619 nm) AlGaInP/GaInP tensile strained quantum well lasers

3. Room‐temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

4. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers

5. The growth of GaAs, AlGaAs, and selectively doped AlGaAs/GaAs heterostructures by metalorganic vapor phase epitaxy using tertiarybutylarsine

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1. Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy;Applied Physics Letters;2016-12-26

2. Experimental study on the mechanism governing spectral shifts in low power 670 nm AlGaInP multiple quantum well (MQW) laser diodes over temperature range 5–45 °C;Canadian Journal of Physics;2016-07

3. Spectral changes due to carrier induced band gap shrinkage for 675 nm AlGaInP multiple quantum well (MQW) laser diodes at room temperatures;Optik;2016-05

4. Effect of oxygen incorporation on the vibrational properties of Al0.2Ga0.3In0.5P:Be films;Thin Solid Films;2011-10

5. Effects of rapid thermal annealing on optical properties of p-doped and undoped InAs/InGaAs dots-in-a-well structures;Journal of Applied Physics;2008-08