Dynamic characteristics of dislocations in indium‐doped gallium arsenide crystal
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96541
Reference10 articles.
1. Impurity effect on grown‐in dislocation density of InP and GaAs crystals
2. Dislocation-free GaAs and InP crystals by isoelectronic doping
3. Crystal growth of completely dislocation-free and striation-free GaAs
4. Dislocation Etch Pits in GaAs
5. Dislocation velocities in indium antimonide
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A model for dislocation glide with impurity dragging: Application to GaAs:0·2at. % In;Philosophical Magazine A;1995-03
2. General behavior of the In/GaAs couple under prolonged sintering;Applied Physics A Materials Science & Processing;1995-03
3. Chapter 7 Dislocations in III/V Compounds;Imperfections in III/V Materials;1993
4. Impurity effects on the mechanical behavior of GaAs crystals;Journal of Applied Physics;1992-05
5. Role of Impurities in Reducing Grown-in Dislocations in Compound Semiconductor Crystals;MRS Proceedings;1992
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