Indium doping of HgCdTe layers during growth by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96818
Reference6 articles.
1. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe
2. Latest developments in the growth of CdxHg1−xTe and CdTe–HgTe superlattices by molecular beam epitaxy
3. Molecular beam epitaxial growth of high quality HgTe and Hg1−xCdxTe onto GaAs(001) substrates
4. Indium ion implantation in Hg0.78Cd0.22Te/CdTe
5. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys: II . Defect Structure of Indium‐Doped
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