Conversion of the conductivity mode in silicon by oxygen ion implantation and its application in a novel dielectric isolation technique
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.93125
Reference12 articles.
1. Mechanism of the Formation of Donor States in Heat-Treated Silicon
2. The effect of carbon on thermal donor formation in heat treated pulled silicon crystals
3. Microdistribution of Oxygen in Silicon
4. Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscale
5. A multiple p-n-junction structure obtained from as-grown Czochralski silicon crystals by heat treatment: Application to solar cells
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A new formation process of anodizable structures of n, n+, and n− silicon for the production of silicon-on-insulator structures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1988-09
2. Microstructural Characterization of Porous Silicon SOI Structures;MRS Proceedings;1987
3. Oxygen in Silicon;Defects and Properties of Semiconductors;1987
4. p‐njunction formation using laser induced donors in silicon;Applied Physics Letters;1986-05-05
5. Crystalline quality of silicon layer formed by FIPOS technology;Journal of Crystal Growth;1983-10
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