Correlation of oxygen concentration and activated oxygen donors in silicon crystals on a microscale
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92304
Reference8 articles.
1. Microdistribution of Oxygen in Silicon
2. Microdistribution of Oxygen in Silicon
3. Mechanism of the Formation of Donor States in Heat-Treated Silicon
4. Determination of oxygen concentration profiles in silicon crystals observed by scanning IR absorption using semiconductor laser
5. Quantitative Determination of the Carrier Concentration Distribution in Semiconductors by Scanning IR Absorption: Si
Cited by 22 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Chemistry of Point Defect in Silicon and its Applications in Semiconductor Technology;MRS Proceedings;1995
2. Maximum Concentration of Thermal Donors Formed at 450 °C in Silicon in Dependence on the Oxygen Concentration;physica status solidi (a);1986-03-16
3. Measurement of the Out-Diffusion Profile of Oxygen in Silicon;Japanese Journal of Applied Physics;1985-10-20
4. Space Correlation of Microdefects with Recombination of Excess Carriers in CZSi;physica status solidi (a);1985-05-16
5. Detection of oxygen concentration in silicon wafers using a tunable diode laser;IEEE Journal of Quantum Electronics;1985-04
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