Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues-Reference-Cited by-同舟云学术

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

Published:2014-06 Issue:6 Volume:4 Page:067118
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Calciati Marco¹,Goano Michele¹²,Bertazzi Francesco¹²,Vallone Marco¹,Zhou Xiangyu¹,Ghione Giovanni¹,Meneghini Matteo³,Meneghesso Gaudenzio³,Zanoni Enrico³,Bellotti Enrico⁴,Verzellesi Giovanni⁵,Zhu Dandan⁶,Humphreys Colin⁶

Affiliation:

1. Dipartimento di Elettronica e Telecomunicazioni, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy

2. IEIIT-CNR, Politecnico di Torino, corso Duca degli Abruzzi 24, 10129 Torino, Italy

3. Dipartimento di Ingegneria dell'Informazione, Università di Padova, Via Gradenigo 6/B, 35131 Padova, Italy

4. Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary's Street, 02215 Boston, MA, USA

5. Dipartimento di Scienze e Metodi dell'Ingegneria, Università di Modena e Reggio Emilia, 42122 Reggio Emilia, Italy

6. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

Funder

U.S. Army Research Laboratory

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4882176

Reference123 articles.

1. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

2. On the origin of IQE-‘droop’ in InGaN LEDs

3. GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels

4. Efficiency droop in nitride-based light-emitting diodes

5. Efficiency droop in light-emitting diodes: Challenges and countermeasures

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