Enthalpy of formation of antisite defects and antistructure pairs in III‐V compound semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344337
Reference5 articles.
1. Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors
2. Atomic model for theEL2 defect in GaAs
3. Consequences of anion vacancy nearest‐neighbor hopping in III‐V compound semiconductors: Drift in InP metal‐insulator‐semiconductor field‐effect transistors
4. Binding and formation energies of native defect pairs in GaAs
5. Thermodynamical analysis of optimal recombination centers in thyristors
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2. Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors;Russian Physics Journal;2007-05
3. The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects;Semiconductors;2005
4. Effects of degree of three-dimensional order and Fe impurities on photoluminescence of boron nitride;Journal of Applied Physics;2004-08-15
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