The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects-Reference-Cited by-同舟云学术

The Electrical and Optical Properties of InAs Irradiated with Electrons (∼2 MeV): The Energy Structure of Intrinsic Point Defects

Published:2005 Issue:4 Volume:39 Page:385
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Brudnyı̆ V. N.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/1.1900249.pdf

Reference35 articles.

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3. N. G. Kolin, V. B. Osvenskii, N. S. Rytova, and U. S. Yugova, Fiz. Tekh. Poluprovodn. (Leningrad) 21, 521 (1987) [Sov. Phys. Semicond. 21, 320 (1987)].

4. V. N. Brudnyi, N. G. Kolin, and A. I. Potapov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 37, 408 (2003) [Semiconductors 37, 390 (2003)].

5. V. V. Karataev, E. S. Yurova, M. G. Mil’vidskii, et al., Neorg. Mater. 21, 1631 (1985).

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