Isoelectronic doping in GaAs epilayers grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.100184
Reference16 articles.
1. Low dislocation, semi-insulating In-doped GaAs crystals
2. Low-defect InSb crystal growth by InN doping
3. High quality epitaxial GaAs and InP wafers by isoelectronic doping
4. Indium Isoelectronic Doping Influence on Etch Pit Density in GaAs Layers Grown by Vapour Phase Epitaxy
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2. Photoluminescence Studies of In-Doped GaN:Mg Films;Japanese Journal of Applied Physics;2005-10-11
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4. Capacitance–voltage and current–voltage characterization of AlxGa1−xAs–GaAs structures;Journal of Applied Physics;1995-12-15
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