Roughening of GaN homoepitaxial surfaces due to step meandering and bunching instabilities and their suppression in hydride vapor phase epitaxy
Author:
Affiliation:
1. SCIOCS Co. Ltd., Hitachi, Ibaraki 319-1418, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5042572
Reference19 articles.
1. Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates
2. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
3. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
4. Recent progress of GaN power devices for automotive applications
5. Reliability studies of vertical GaN devices based on bulk GaN substrates
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3. Controllable step-flow growth of GaN on patterned freestanding substrate;Journal of Semiconductors;2024-02-01
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