Temperature-dependent Hall scattering factor and drift mobility in remotely doped Si:B/SiGe/Si heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123513
Reference10 articles.
1. SiGe heterostructures for FET applications
2. Electron mobility enhancement in a strained Si channel
3. Theoretical analysis of hall factor and hall mobility in p-type silicon
4. Hall factor in strainedp-type dopedSi1−xGexalloy
5. Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys
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1. Effects of heavy boron doping on the valence band offset at the Si1−xGex∕Si interface and Si1−xGex band gap;Applied Physics Letters;2005-12-19
2. Carrier concentration and mobility in B doped Si1−xGex;Materials Science and Engineering: B;2003-09
3. Hall mobilities in B-doped strained Si1−xGex and Si1−x−yGexCy layers grown by ultrahigh vacuum chemical vapor deposition;Journal of Applied Physics;2000-08-15
4. Drift mobilities and Hall scattering factors of holes in ultrathin Si1−xGex layers (0.3;Journal of Applied Physics;2000-08-15
5. Experimental evidence of valence band deformation due to strain in inverted hole channel of strained-Si pMOSFETs;Thin Solid Films;2000-07
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