Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth-Reference-Cited by-同舟云学术

Suppressing the carrier concentration of zinc tin nitride thin films by excess zinc content and low temperature growth

Author:

Wang Yong¹^ORCID,Ohsawa Takeo²^ORCID,Meng Xiangyue³^ORCID,Alnjiman Fahad⁴⁵,Pierson Jean-Francois⁴^ORCID,Ohashi Naoki²^ORCID

Affiliation:

1. International Center for Young Scientists, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

2. Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

3. Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan

4. Institut Jean Lamour, UMR 7198-CNRS, Université de Lorraine, Nancy 54011, France

5. Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabia

Funder

NIMS-ICYS

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference21 articles.

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