Space‐charge recombination inN‐AlGaAs/p+‐GaAs heterojunction diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102272
Reference18 articles.
1. High-speed frequency dividers using self-aligned AlGaAs/GaAs heterojunction bipolar transistors
2. Control of Be diffusion in molecular beam epitaxy GaAs
3. Surface effect‐induced fast Be diffusion in heavily doped GaAs grown by molecular‐beam epitaxy
4. Summary Abstract: Influence of substrate misorientation on defect and impurity incorporation in AlGaAs/GaAs heterojunctions grown by molecular-beam epitaxy
5. Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular‐beam epitaxy
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Zero‐field time‐of‐flight characterization of minority‐carrier transport in heavily carbon‐doped GaAs;Journal of Applied Physics;1993-06
2. Heavily dopedp‐GaAs grown by low‐pressure organometallic vapor phase epitaxy using liquid CCl4;Journal of Applied Physics;1992-09
3. Effect of molecular-beam epitaxy growth conditions on GaAs–AlGaAs heterojunction bipolar transistor performance: Beryllium incorporation and device reliability;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1992-03
4. High-reliability GaAs-AlGaAs HBTs by MBE with Be base doping and InGaAs emitter contacts;IEEE Electron Device Letters;1991-09
5. Effect of post‐growth annealing on the recombination centers in C‐dopedp+‐GaAs/n‐AlGaAs heterojunctions;Journal of Applied Physics;1991-07-15
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3