Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects-Reference-Cited by-同舟云学术

Threshold voltage in short channel polycrystalline silicon thin film transistors: Influence of drain induced barrier lowering and floating body effects

Published:2010-04 Issue:7 Volume:107 Page:074505
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Valletta A.,Gaucci P.,Mariucci L.,Pecora A.,Cuscunà M.,Maiolo L.,Fortunato G.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3359649

Reference17 articles.

1. 21.1: Invited Paper: CG Silicon Technology and Development of System on Panel

2. Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

3. Kink effect in short-channel polycrystalline silicon thin-film transistors

4. Short channel effects in polysilicon thin film transistors

5. Analysis of threshold voltage of short channel polycrystalline silicon thin-film transistors fabricated on large grains

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