Enhancing electron mobility in La-doped BaSnO3 thin films by thermal strain to annihilate extended defects
Author:
Affiliation:
1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
Funder
National Research Foundation of Korea (NRF)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4954638
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