Zn incorporation in Ga1−xAlxAs grown by liquid phase epitaxy and its electrical properties
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332660
Reference6 articles.
1. Te and Ge — doping studies in Ga1−xAlxAs
2. Beryllium and zinc behaviour in GaAs and GaAlAs for high concentration solar cells
3. Acceptor energy level for Zn in Ga1−xAlxAs
4. Electrical Properties ofN-Type Germanium
5. Doping and electrical properties of Mg in LPE AlxGa1−xAs
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1. Nuclear Batteries Based on III-V Semiconductors;Polymers, Phosphors, and Voltaics for Radioisotope Microbatteries;2002-06-19
2. Misorientation dependence of zinc incorporation in GaAs;Journal of Crystal Growth;1994-09
3. Pressure and temperature dependence of Zn incorporation in metalorganic chemical vapour deposition grown GaAs and AlGaAs using diethylzinc as precursor;Journal of Crystal Growth;1993-03
4. Magnesium doping in In0.32Ga0.68P grown by liquid‐phase epitaxy;Journal of Applied Physics;1992-05
5. Intrusions in the active layer of channeled‐substrate‐planar laser diodes;Journal of Applied Physics;1987-08
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